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GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml

GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml

    • GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml
    • GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml
    • GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml
  • GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml

    Product Details:

    Place of Origin: China
    Brand Name: OEM
    Certification: ISO9001

    Payment & Shipping Terms:

    Minimum Order Quantity: Negotiable
    Price: Negotiable
    Packaging Details: 100 clean bag or single box packaging
    Delivery Time: 5-7 working days after received your payment details working days after received your payment details
    Payment Terms: T/T, Western Union, L/C
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    Detailed Product Description
    CAS: 25617-97-4 EINECS No.: 247-129-0
    MF: GaN Appearance: Crystal
    Density: 6.1g/mL,25/4℃ MW: 83.73
    High Light:

    silicon wafer substrate

    ,

    silicon oxide wafer

    GaN Gallium Nitride Single Crystal Wafer CAS 25617-97-4 with Density of 6.1g/mL​

     

    Typical Physical Properties of GaN Gallium Nitride Single Crystal Wafer

     

    2'' GaN Templates

     
    Item GaN-T-N GaN-T-S
    Dimensions Φ 2''
    Thickness 15 μm, 20 μm, 30 μm, 40 μm 30 μm, 90 μm
    Orientation C-axis(0001) ± 1°
    Conduction Type N-type Semi-Insulating
    Resistivity(300K) < 0.05 Ω.cm > 106 Ω.cm
    Dislocation Density Less than 1x108 cm-2
    Substrate structure Thick GaN on Sapphire(0001)
    Useable Surface Area > 90%
    Polishing Standard: SSP Option: DSP
    Package Packaged in a class 100 clean room environment, in cassettes of 25pcs or single wafer containers, under a nitrogen atmosphere.
     
     
     

     

    GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml
     
     

    2'' -Standing GaN Substrates

     

    Item GaN-FS-N GaN-FS-SI
    Dimensions Φ50.8mm ± 1mm
    Marco Defect Density ALevel 2 cm-2
    B Level > 2 cm-2
    Thickness 350 ± 25 μm
    Orientation C-axis(0001) ± 0.5°
    Orientation Flat (1-100) ± 0.5°, 16.0 ± 1.0mm
    Secondary Orientation Flat (11-20) ± 3°, 8.0 ± 1.0mm
    TTV(Total Thickness Variation) <15 μm
    BOW <20 μm
    Conduction Type N-type Semi-Insulating
    Resistivity(300K) < 0.5 Ω.cm >106 Ω.cm
    Dislocation Density Less than 5x106 cm-2
    Useable Surface Area > 90%
    Polishing Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground
    Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.


     

     GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml
     

     Free-standing GaN Substrates (Customized size)

     
    Item GaN-FS-10 GaN-FS-15
    Dimensions 10.0mm Χ10.5mm 14.0mmΧ 15.0mm
    Marco Defect Density ALevel 0 cm-2
    B Level 2 cm-2
    Thickness Rank 300 300 ± 25 μm
    Rank 350 350 ± 25 μm
    Rank 400 400 ± 25 μm
    Orientation C-axis(0001) ± 0.5°
    TTV(Total Thickness Variation) <15 μm
    BOW <20 μm
    Conduction Type N-type Semi-Insulating
    Resistivity(300K) < 0.5 Ω.cm >106 Ω.cm
    Dislocation Density Less than 5x106 cm-2
    Useable Surface Area > 90%
    Polishing Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground
    Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

     

    GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml

     
    GaN-FS-N-1.5
     
    Item GaN-FS-N-1.5
    Dimensions 25.4mm ± 0.5mm  38.1mm± 0.5mm 40.0mm ± 0.5mm 45.0mm ± 0.5mm
    Marco Defect Density ALevel 2 cm-2
    B Level > 2 cm-2
    Thickness 350 ± 25 μm
    Orientation C-axis(0001) ± 0.5°
    Orientation Flat (1-100) ± 0.5°   8 ± 1mm (1-100) ± 0.5°   12 ± 1mm (1-100) ± 0.5°   14 ± 1mm (1-100) ± 0.5° 14 ± 1mm
    Secondary Orientation Flat (11-20) ± 3°     4 ± 1mm (11-20) ± 3°        6 ± 1mm (11-20) ± 3°        7 ± 1mm (11-20) ± 3° 7 ± 1mm
    TTV(Total Thickness Variation) <15 μm
    BOW <20 μm
    Conduction Type N-type Semi-Insulating
    Resistivity(300K) < 0.5 Ω.cm >106 Ω.cm
    Dislocation Density Less than 5x106 cm-2
    Useable Surface Area > 90%
    Polishing Front Surface: Ra < 0.2nm. Epi-ready polished Back Surface: Fine ground
    Package Packaged in a class 100 clean room environment, in single wafer containers, under a nitrogen atmosphere.

     
    GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml
     
     

    HR‐XRD Rocking Curves
     

     GaN Gallium Nitride Silicon Wafer Single Crystal CAS 25617-97-4 Density 6.1g/ml
     

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