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LaAlO3 Lanthanum Aluminate Growing Single Crystals Perovskite Crystal Structure

LaAlO3 Lanthanum Aluminate Growing Single Crystals Perovskite Crystal Structure

    • LaAlO3 Lanthanum Aluminate Growing Single Crystals Perovskite Crystal Structure
    • LaAlO3 Lanthanum Aluminate Growing Single Crystals Perovskite Crystal Structure
    • LaAlO3 Lanthanum Aluminate Growing Single Crystals Perovskite Crystal Structure
  • LaAlO3 Lanthanum Aluminate Growing Single Crystals Perovskite Crystal Structure

    Product Details:

    Place of Origin: China
    Brand Name: OEM
    Certification: ISO9001

    Payment & Shipping Terms:

    Minimum Order Quantity: Negotiable
    Price: Negotiable
    Packaging Details: 100g/bag or single wafer box packaging.
    Delivery Time: 5-7 working days after received your payment details working days after received your payment details
    Payment Terms: T/T, Western Union, L/C
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    Detailed Product Description
    CAS: 12003-65-5 EINECS No: 215-691-6
    MF: LaAlO3 Grade Standard: Industrial Grade, Reagent Grade
    Melt Point: 2080 °C Density: 6.52 G/cm3
    High Light:

    silicon wafer substrate

    ,

    silicon oxide wafer

     

    LaAlO3 Lanthanum aluminate crystal substrate single crystal with perovskite crystal structure

     

     

    Breif intruduction of LaAlO3 Lanthanum aluminate crystal substrate

     

    LaAlO3 perovskite crystal structure of materials on a variety of good lattice matching is epitaxial HTS thin films and giant magnetoresistance excellent substrate material,

     

    Its dielectric properties suitable for low loss microwave dielectric resonator.

     

    We can provide rods, sheets and cutting rough epitaxial substrate polishing to meet the diverse needs of the global market.

     

    Lanthanum aluminate single crystal match the variety of perovskite structure materials.

     

    It is the excellent substrate materials

     

    Typical Physical Properties of LaAlO3 Lanthanum aluminate crystal substrate

     

    Crystal Structure Cubic at >435°C a=3.821Å
    Rhombohedral at 25 °C a=3.79Å c=13.11Å
    Growth Method CZ
    Density 6.52 g/cm3
    Melt Point 2080 °C
    Hardness 6 (Mohn)
    Thermal Expansion 10 x (10-6/°C)
    Dielectric Constant ~25
    Loss Tangent at 10 GHz ~3 x 10-4@300K , ~0.6 x 10-4@77K
    Color and Appearance Tan to Brown based on annealing condition
    Visible twins on polished substrate.
    Chemical Stability Insoluble in mineral acids at 25 oC and soluble in H3PO3 at> 150 oC

    Contact Details
    Greenearth Industry Co.,Ltd

    Contact Person: Ms. Linda

    Tel: +86-19945681435

    Send your inquiry directly to us (0 / 3000)

    Contact

    Address: Rm 1712-1715, No.88, Sibao Rd, Shanghai , China